View IRGVH50F_691189.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD -90928A
IRGVH50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCES = 1200V
G E
VCE(on) max = 2.9V
@VGE = 15V, IC = 25A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
TO-258AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
Max.
1200 45 25 180 90 20 200 80 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 10.5 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.625 0.21 -- -- 30
C/W
Test Conditions
For footnotes refer to the last page
www.irf.com
1
02/20/02
IRGVH50F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 --- --- V VGE = 0V, IC = 100 A Emitter-to-Collector Breakdown Voltage 22 --- --- V VGE = 0V, IC = 1.0 A --- 2.1 2.9 IC = 25A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage --- 2.5 --- IC = 45A See Fig.2, 5 V --- 2.4 --- IC = 25A , TJ = 125C VGE(th) Gate Threshold Voltage 3.0 --- 6.0 VCE = VGE, IC = 250 A VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -14 --- mV/C VCE = VGE, IC = 250 A gfe Forward Transconductance T 7.5 --- --- S VCE = 100V, IC = 25A --- --- 100 VGE = 0V, VCE = 960V A ICES Zero Gate Voltage Collector Current --- --- 1200 VGE = 0V, VCE = 960V, TJ = 125C IGES Gate-to-Emitter Leakage Current --- --- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V See Fig. 8 43 VGE = 15V 68 IC = 25A, VCC = 400V 26 VGE = 15V, RG = 2.35 ns 480 Energy losses include "tail" 330 See Fig. 9, 10, 14 --- mJ --- 8.2 --- TJ = 125C --- IC = 25A, VCC = 400V ns --- VGE = 15V, RG = 2.35 --- Energy losses include "tail" --- mJ See Fig. 11, 14 --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- 2400 --- VGE = 0V --- 140 --- pF VCC = 30V See Fig. 7 --- 28 --- = 1.0MHz Typ. --- --- --- --- --- --- --- 1.4 4.5 5.9 33 15 590 500 13 6.8
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
2
www.irf.com
IRGVH50F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
IRGVH50F
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRGVH50F
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
www.irf.com
5
IRGVH50F
125C
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6
www.irf.com
IRGVH50F
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 960V 960V 4 X IC@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 960V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
Q
R
9 0%
S
1 0% 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
www.irf.com
7
IRGVH50F
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. Equipment limitation.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0
Case Outline and Dimensions -- TO-258AA
A 4.19 [.165] 3.93 [.155] 17.65 [.695] 17.39 [.685] 6.85 [.270] 6.09 [.240]
0.12 [.005] 1.14 [.045] 0.88 [.035]
26.59 [1.047] 25.33 [ .997]
17.95 [.707] 17.70 [.697]
21.20 [.835] 20.70 [.815]
13.97 [.550] 13.46 [.530]
B R 3.68 [.145] 3.18 [.125]
8.63 [.340] 7.62 [.300]
C 3X 1.65 [.065] 1.39 [.055] CA C B 3.68 [.145] 3.43 [.135] 14.22 [.560] 11.43 [.450]
5.08 [.200] 2X
0.50 [.020] 0.25 [.010]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUT LINE T O-258AA B EFORE LEADFORMING.
LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
8
www.irf.com

▲Up To Search▲

Price & Availability of IRGVH50F

	To Download IRGVH50F Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .